• InAs/(Al)GaAs quantum dots for intermediate band solar cells 

      Thomassen, Sedsel Fretheim (Doktoravhandlinger ved NTNU, 1503-8181; 2012:242, Doctoral thesis, 2012)
      Intermediate band solar cells (IBSCs) have a theoretical conversion efficiency limit of 63.2%, compared to 40.7% for a single junction solar cell. The enhanced efficiency limit is due to an intermediate energy level ...
    • Quantitative strain analysis of InAs/GaAs quantum dot materials 

      Vullum, Per Erik; Nord, Magnus Kristofer; Vatanparast, Maryam; Thomassen, Sedsel Fretheim; Boothroyd, Chris; Holmestad, Randi; Fimland, Bjørn-Ove; Reenaas, Turid Worren (Journal article; Peer reviewed, 2017)
      Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch ...